Factory Customized Precision Machining Sapphire
ISapphire inobulukhuni be-Mohs 9, okwesibini kuphela kwidayimane, kwaye inokumelana nokunxiba kakuhle. Kwangaxeshanye, inozinzo olugqwesileyo lweekhemikhali kwaye inokumelana nokubola kwayo nayiphi na i-asidi kunye ne-alkali. Ukongeza, ubushushu obuphezulu bokumelana nesafire yi-2060 ℃. Ngenxa yezi zibonelelo zingentla zesafire, isafire isetyenziselwa izixhobo kunye nezixhobo, ezinokuphucula kakhulu ubomi benkonzo kunye nokumelana neendawo ezahlukeneyo ezinzima.
Iindawo ezichanekileyo zeSapphire zihlala zineemfuno zemilo entsonkothileyo kunye neemfuno zokutywinwa ezichanekileyo. Sinokwenza iimilo ezahlukeneyo ngokwemizobo yabathengi. Sinezixhobo zokusika ezichanekileyo, ukugawula, ukupolisha kunye nokuvavanya ukuqinisekisa ukuba imveliso nganye ihlangabezana neemfuno ezingqongqo zabathengi.
Iindlela eziphambili zokuqulunqa
Iimpahla zeMathiriyeli
ISapphire yikristale enye yealuminiyam oxide (Al2O3). Yenye yezona zinto zinzima. I-Sapphire ineempawu ezilungileyo zokuhambisa ngaphezulu kokubonakalayo, kwaye kufuphi ne-IR spectrum. Ibonisa amandla aphezulu omatshini, ukuchasana kweekhemikhali, ukuqhutyelwa kwe-thermal kunye nokuzinza kwe-thermal. Ihlala isetyenziswa njengezinto zefestile kwintsimi ethile efana nethekhnoloji yendawo apho i-scratch okanye ubushushu obuphezulu bufunekayo.
Ifomula yeemolekyuli | Al2O3 |
Ukuxinana | 3.95-4.1 g/cm3 |
Ulwakhiwo lweCrystal | I-Hexagonal Lattice |
Ulwakhiwo lweCrystal | a =4.758Å , c =12.991Å |
Inani leemolekyuli kwiyunithi yeseli | 2 |
Mohs Ubunzima | 9 |
Indawo yokunyibilika | 2050 ℃ |
Indawo yokubilisa | 3500 ℃ |
Ukwandiswa kweThermal | 5.8×10-6 /K |
Ubushushu obuthile | 0.418 Ws/g/k |
I-Thermal Conductivity | 25.12 W/m/k (@ 100℃) |
Refractive Index | hayi =1.768 ne =1.760 |
dn/dt | 13x10 -6 /K(@633nm) |
Ugqithiso | T≈80% (0.3~5μm) |
Dielectric Constant | 11.5(∥c), 9.3(⊥c) |